PMV213SN NXP Semiconductors, PMV213SN Datasheet - Page 4

• Manufacturer Part Number: PMV213SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
4. Thermal characteristics
Table 3:
9397 750 11128
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
th(j-sp)
Z th(j-sp)
(K/W)
10 2
10
1
10 -4
thermal resistance from junction to solder point
Thermal characteristics
0.2
0.1
0.05
0.02
= 0.5
single pulse
4.1 Transient thermal impedance
10 -3
Rev. 02 — 19 February 2003
10 -2
Conditions
Figure 4
10 -1
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
1
P
PMV213SN
t p
t p (s)
Min Typ Max Unit
-
T
03aj43
=
-
t p
T
t
10
60
4 of 12
K/W