PMV213SN NXP Semiconductors, PMV213SN Datasheet - Page 7

• Manufacturer Part Number: PMV213SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11128
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
= 1 mA; V
5
4
3
2
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
= V
0
GS
60
max
typ
min
(pF)
C
10 3
10 2
10
120
1
10 -1
T j ( C)
03aa32
Rev. 02 — 19 February 2003
180
1
Fig 10. Sub-threshold drain current as a function of
10
(A)
T
I D
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
= 25 C
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03aj49
10 2
TrenchMOS™ standard level FET
2
min
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
typ
PMV213SN
4
max
V GS (V)
03aa35
6
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