PMV213SN NXP Semiconductors, PMV213SN Datasheet - Page 8

• Manufacturer Part Number: PMV213SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11128
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
150 C
GS
0.6
= 0 V
0.9
T j = 25 C
V SD (V)
03aj48
Rev. 02 — 19 February 2003
1.2
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 1.2 A; V
8
6
4
2
0
charge; typical values.
0
I D = 1.2 A
T j = 25 C
DD
= 20 V, 50 V, 80 V
2
V DD = 20 V
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4
PMV213SN
50 V
6
Q G (nC)
03aj50
80 V
8
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