PMV213SN NXP Semiconductors, PMV213SN Datasheet - Page 3

• Manufacturer Part Number: PMV213SN
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11128
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
T
P der
P
I D
(%)
10 -1
10 -2
10 -3
sp
120
der
80
40
10
1
0
function of solder point temperature.
= 25 C; I
0
1
=
Limit R DSon = V DS /I D
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
100
GS
= 10V
150
T sp ( C)
10
03aa17
DC
200
Rev. 02 — 19 February 2003
Fig 2. Normalized continuous drain current as a
I der
(%)
I
120
der
80
40
0
function of solder point temperature.
0
=
-------------------
I
D 25 C
10 2
I
D
t p = 10 s
100 s
1 ms
10 ms
100 ms
50
TrenchMOS™ standard level FET
100%
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
100
V DS (V)
PMV213SN
150
T sp ( C)
03aj44
03aa25
10 3
200
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