FGH40N60SFD Fairchild Semiconductor, FGH40N60SFD Datasheet - Page 5

• Manufacturer Part Number: FGH40N60SFD
• Description: Using Novel Field Stop IGBT Technology, Fairchild's new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential
• Manufacturer: Fairchild Semiconductor

FGH40N60SFD Rev. C
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
5000
4000
3000
2000
1000
0.01
400
100
0.1
10
20
16
12
0
1
8
4
0
0.1
4
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
40A
I
8
C
= 20A
C
C
C
iss
oss
10
rss
1
12
80A
Common Emitter
V
T
C
GE
100
Common Emitter
T
C
= 25
GE
= 0V, f = 1MHz
= 25
CE
16
CE
o
[V]
GE
[V]
C
o
10
[V]
C
100
10 ms
1ms
10
DC
µ
µ
s
s
1000
20
30
5
Figure 10. Gate charge Characteristics
Figure 8. Saturation Voltage vs. V
100
200
20
16
12
15
12
Figure 12. Turn-on Characteristics vs.
10
8
4
0
9
6
3
0
4
0
0
Common Emitter
T
C
= 25
o
t
C
r
10
I
C
Gate-Emitter Voltage, V
40A
t
d(on)
= 20A
8
Gate Resistance, R
Gate Charge, Q
V
50
cc
= 100V
20
Gate Resistance
12
80A
Common Emitter
V
I
T
T
C
CC
C
C
30
= 40A
g
300V
= 25
= 125
= 400V, V
Common Emitter
T
100
[nC]
C
G
GE
o
= 125
[
C
o
Ω
16
C
[V]
]
200V
40
o
GE
C
= 15V
GE
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150
20
50