KSD1691 Fairchild Semiconductor, KSD1691 Datasheet

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KSD1691

Manufacturer Part Number
KSD1691
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2000 Fairchild Semiconductor International
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: P
• Complementary to KSB1151
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
* PW 10ms, duty Cycle 50%
Electrical Characteristics
* Pulse test: PW 50 s, duty Cycle 2% Pulsed
h
V
I
I
I
P
P
T
T
I
h
h
V
V
I
h
V
V
t
t
t
FE
C
CP
B
EBO
CBO
ON
STG
F
J
STG
FE1
FE2
FE3
EBO
C
C
CBO
CEO
CE
BE
Symbol
Symbol
(sat)
(sat)
Classificntion
Classification
h
FE 2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Turn ON Time
Storage Time
Fall Time
C
= 1.3W (T
Parameter
a
a
C
T
=25 C)
=25 C)
=25 C)
C
100 ~ 200
=25 C unless otherwise noted
Parameter
T
C
O
=25 C unless otherwise noted
KSD1691
V
V
V
V
V
I
I
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CC
L
= 2A, I
= 2A, I
= 5
= - I
Test Condition
= 50V, I
= 7V, I
= 1V, I
= 1V, I
= 1V, I
= 10V, I
B2
B
B
= 0.2A
C
= 0.2A
= 0.2A
C
C
C
160 ~ 320
E
C
= 0
= 0.1A
= 2A
= 5A
= 0
= 2A
Y
1
1. Emitter
Min.
100
60
50
- 55 ~ 150
Value
150
1.3
2.Collector
60
60
20
5
8
7
1
Typ.
0.1
0.9
0.2
1.1
0.2
200 ~ 400
TO-126
G
Max.
400
2.5
0.3
1.2
10
10
3.Base
1
1
Rev. A, February 2000
Units
W
W
V
V
V
A
A
A
Units
C
C
V
V
A
A
s
s
s

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KSD1691 Summary of contents

Page 1

... BE t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse test duty Cycle 2% Pulsed h Classificntion FE Classification ©2000 Fairchild Semiconductor International KSD1691 = =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition V = 50V ...

Page 2

... BE 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International 1000 100 I = 20mA 10mA 0.01 1.2 1.6 2 Ic(Pulse)MAX Ic(DC)MAX 1 ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2000 Fairchild Semiconductor International (Continued) 125 150 175 Rev. A, February 2000 ...

Page 4

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2000 Fairchild Semiconductor International TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A, February 2000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...

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