KSB834W Fairchild Semiconductor, KSB834W Datasheet
KSB834W
Manufacturer Part Number
KSB834W
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSB834W.pdf
(3 pages)
©2001 Fairchild Semiconductor Corporation
Low Frequency Power Amplifier
• Complement to KSD880W
PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
I
P
BV
V
V
V
I
P
T
T
I
I
h
h
V
V
f
C
t
t
t
FE
B
Symbol
C
CBO
EBO
T
ON
STG
F
FE1
FE2
C
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CEO
(sat)
Classification
(on)
Symbol
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn ON Time
Storage Time
Fall Time
Classification
h
FE1
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
T
C
=25 C unless otherwise noted
T
a
C
C
=25 C)
=25 C unless otherwise noted
Parameter
=25 C)
KSB834W
V
V
I
V
V
I
V
V
V
f = 1MHz
V
I
R
C
C
B1
CB
EB
CE
CE
CE
CE
CB
CC
L
= - 50mA, I
= - 3A, I
= 30
60 ~ 120
= - I
= - 60V, I
= - 7V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 5V, I
= - 10V, I
= -30V, I
Test Condition
O
B2
= - 0.2A
B
= - 0.3A
C
C
C
C
C
C
E
B
E
= 0
= - 0.5A
= - 3A
= - 0.5A
= - 0.5A
= - 1A
= 0
= 0
= 0
1.Base 2.Collector
1
Min.
- 60
60
20
- 55 ~ 150
Value
- 0.5
- 60
- 60
150
- 7
- 3
1.5
30
Typ.
- 0.5
- 0.7
150
0.4
1.7
0.5
D2-PAK
100 ~ 200
9
Y
3.Emitter
Max.
- 100
- 100
200
- 1
- 1
Units
Rev. A1, June 2001
W
W
V
V
V
A
A
C
C
Units
MHz
pF
V
V
V
A
A
s
s
s
Related parts for KSB834W
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
KSB834W Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob t Turn ON Time ON t Storage Time STG t Fall Time F h Classification FE Classification h FE1 ©2001 Fairchild Semiconductor Corporation KSB834W T =25 C unless otherwise noted C Parameter = = =25 C unless otherwise noted C Test Condition 60V 7V ...
Page 2
... Package Demensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2001 Fairchild Semiconductor Corporation 2 D -PAK 4.50 0.20 0.80 0.10 2.54 TYP 10.00 (8.00) (4.40) 0.20 (2XR0.45) 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 0.20 0.80 0.10 Dimensions in Millimeters Rev. A1, June 2001 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...