KSC2333 Fairchild Semiconductor, KSC2333 Datasheet

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KSC2333

Manufacturer Part Number
KSC2333
Description
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
High Speed Switching Application
• Low Collector Saturation Voltage
• Specified of Reverse Biased SOA With Inductive Load
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
*PW 350 s, Duty Cycle 10%
Electrical Characteristics
* Pulse Test: PW 350 s, Duty Cycle 2%Pulsed
h
I
I
V
I
h
V
V
V
I
P
T
T
V
V
I
I
I
I
h
V
V
t
t
t
FE
CP
B
CBO
C
CER
CEX1
CEX2
EBO
ON
STG
F
FE1
FE2
J
STG
CEX
CBO
CEO
EBO
C
CEO
CEX
CE
BE
Symbol
Symbol
(sat)
(sat)
Classification
(sus)1
(sus)2
(sus)
Classification
h
FE1
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
*Collector Current (Pulse)
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Turn ON Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Base Current (DC)
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
TC=25 C unless otherwise noted
=25 C)
20 ~ 40
Parameter
T
C
R
=25 C unless otherwise noted
KSC2333
I
I
T
I
T
V
V
V
V
T
V
V
V
I
I
V
I
R
C
C
C
C
C
B1
C
C
C
CB
CE
CE
CE
EB
CE
CE
CC
L
= 0.5A, I
= 0.5A, I
= 1A, I
= 0.5A, I
= 0.5A, I
= 125 C, L = 180 H, clamped
= 125 C, L = 180 H, clamped
= 125 C
= 300
= - I
= 5V, I
= 400V, I
= 400V, R
= 400V, V
= 400V, V
= 5V, I
= 5V, I
= 150V, I
B2
B1
Test Condition
= 0.1A
C
B
B1
C
C
B
B
= 0.2A, -I
=0.1A, L = 1mH
= 0
= 0.1A
= 0.5A
= 0.1A
= 0.1A
E
C
= -I
30 ~ 60
BE
BE
BE
= 0
= 0.5A
(off) = -5V
(off) = -5V @
O
B2
=51 , T
= 0.1A
B2
=0.2A
C
1.Base
1
= 125 C
- 55 ~ 150
2.Collector
Value
500
400
150
15
2
4
7
1
Min.
400
450
400
20
10
TO-220
40 ~ 80
Y
Max.
3.Emitter
1.2
2.5
10
10
10
80
1
1
1
1
1
Rev. A1, June 2001
Units
W
Units
V
V
V
A
A
A
C
C
mA
mA
V
V
V
V
V
A
A
A
s
s
s

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KSC2333 Summary of contents

Page 1

... Base-Emitter Saturation Voltage BE t Turn ON Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 350 s, Duty Cycle 2%Pulsed h Classification FE Classification h FE1 ©2001 Fairchild Semiconductor Corporation KSC2333 T =25 C unless otherwise noted C Parameter = TC=25 C unless otherwise noted Test Condition I = 0.5A, I =0.1A 1mH 0.5A 0.1A C ...

Page 2

... CE 0. [mA], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10000 1000 100 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Forward Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 1000 I = 90mA 80mA 70mA B = 60mA I = 50mA B 100 I = 40mA 30mA ...

Page 3

... Typical characteristics 160 140 120 100 80 S/b Limited 60 Dissipation Limited 100 C], CASE TEMPERATURE C Figure 7. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation (Continued) 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 125 150 175 200 100 125 150 175 200 C], CASE TEMPERATURE C Figure 8 ...

Page 4

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, June 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. A CEx™ FAST FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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