MJE210 Fairchild Semiconductor, MJE210 Datasheet

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MJE210

Manufacturer Part Number
MJE210
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
Feature
• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : f
• Complement to MJE200
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
I
P
T
I
h
V
V
T
BV
I
h
h
V
V
V
f
C
C
EBO
CBO
T
J
FE1
FE2
FE3
EBO
C
STG
CBO
CEO
CE
BE
BE
Symbol
Symbol
ob
CEO
(sat)
(on)
(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter ON Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
Parameter
C
T
T
=25 C)
C
=65MHz@I
=25 C unless otherwise noted
T
C
=25 C unless otherwise noted
MJE210
C
= -100mA (Min.)
I
V
V
V
V
V
V
I
I
I
I
V
V
V
C
C
C
C
C
CB
CB
BE
CE
CE
CE
CE
CE
CB
= - 10mA, I
= - 500mA, I
= - 2A, I
= - 5A, I
= - 5A, I
= - 8V, I
= -40V, I
= - 40V, I
= - 1V, I
= - 1V, I
= - 2V, I
= - 1V, I
= - 10V, I
= - 10V, I
C
B
B
Test Condition
C
= - 200mA
= - 1A
= - 1A
C
C
C
C
E
B
E
C
E
= 0
= - 500mA
= - 2A
= - 5A
= - 2A
= 0
B
= 0
=0 @ T
= 0, f = 1MHz
= - 100mA
= - 50mA
J
= 125 C
1
1. Emitter
- 65 ~ 150
Value
- 40
- 25
150
- 8
- 5
15
2.Collector
Min.
-25
70
45
10
65
TO-126
Max.
-0.75
-100
-100
-100
-0.3
-1.8
-2.5
-1.6
180
120
3.Base
Rev. A1, February 2001
Units
W
V
V
V
A
Units
C
C
MHz
nA
nA
pF
V
V
V
V
V
V
A

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MJE210 Summary of contents

Page 1

... Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE V (on) Base-Emitter ON Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2001 Fairchild Semiconductor Corporation MJE210 =65MHz@I = -100mA (Min =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition 10mA, I ...

Page 2

... V [V], COLLECTOR BASE VOLTAGE CB Figure 3. Collector Output Capacitance 100 C], CASE TEMPERATURE C Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation - - -1V CE -0.1 -0.01 -0.01 -1 -10 Figure 2. Collector-Emitter Saturation Voltage -100 f=0.1MHZ -10 -1 -0.1 -10 -100 -1 Figure 4. Safe Operating Area ...

Page 3

... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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