2N5210 Fairchild Semiconductor, 2N5210 Datasheet - Page 2

• Manufacturer Part Number: 2N5210
• Manufacturer: Fairchild Semiconductor

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
I
I
h
V
V
f
C
h
NF
Symbol
CBO
EBO
T
FE
fe
(BR)CEO
(BR)CBO
CE(
BE(
cb
Electrical Characteristics
*
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
on
sat
)
)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
Parameter
TA = 25°C unless otherwise noted
I
I
V
V
I
I
I
I
I
I
f= 20 MHz
V
I
f = 1.0 kHz
I
R
I
R
C
C
C
C
C
C
C
C
C
C
C
CB
EB
CB
S
S
= 1.0 mA, I
= 0.1 mA, I
= 100 A, V
= 1.0 mA, V
= 10 mA, V
= 10 mA, I
= 1.0 mA, V
= 1.0 mA, V
= 20 A, V
= 20 A, V
= 500 A,V
= 22 k , f = 10 Hz to 15.7 kHz
= 10 k , f = 1.0 kHz
= 35 V, I
= 3.0 V, I
= 5.0 V, I
Test Conditions
E
B
CE
CE
B
E
C
E
CE
CE
= 0
CE
= 1.0 mA
CE
CE
CE
= 0
= 0
= 0
= 0, f = 100 kHz
= 5.0 V,
= 5.0 V,
= 5.0 V*
NPN General Purpose Amplifier
= 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V,
= 5.0 V,
Min
200
250
250
250
50
50
30
Max
0.85
600
900
0.7
4.0
2.0
3.0
50
50
(continued)
Units
MHz
nA
nA
pF
dB
dB
V
V
V
V
3