FJV1845 Fairchild Semiconductor, FJV1845 Datasheet

no-image

FJV1845

Manufacturer Part Number
FJV1845
Description
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJV1845FMTF
Manufacturer:
VISHAY
Quantity:
400 000
Part Number:
FJV1845FMTF
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
FJV1845FMTF
Quantity:
5 000
Part Number:
FJV1845PMTF
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FJV1845PMTF
Quantity:
63 000
©2002 Fairchild Semiconductor Corporation
Amplifier Transistor
• Complement to FJV992
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
I
P
T
T
I
I
h
h
V
V
f
C
C
B
CBO
EBO
T
FE2
Symbol
FE1
FE2
J
STG
CBO
CEO
EBO
C
BE
CE
ob
Symbol
(on)
(sat)
Classification
Classification
h
FE2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
200 ~ 400
P
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
FJV1845
V
V
V
V
V
I
V
V
C
6 E
CB
EB
CE
CE
CE
CE
CB
=10mA, I
300 ~ 600
=5V, I
=120V, I
=6V, I
=6V, I
=6V, I
=6V, I
=30V, I
Test Condition
F
C
C
C
C
C
=0
B
E
=0.1mA
=1mA
=1mA
=1mA
=1mA
=0, f=1MHz
E
=0
h
FE
Classification
400 ~ 800
Min.
0.55
150
200
50
E
1. Base 2. Emitter 3. Collector
-55 ~ 150
Value
120
120
300
150
3
50
10
5
Typ.
0.59
0.07
580
600
110
1.6
1
600 ~ 1200
Max.
1200
0.65
0.3
2.5
50
50
SOT-23
U
Rev. B1, August 2002
Units
mW
2
mA
mA
V
V
V
C
C
Units
MHz
nA
nA
pF
V
V

Related parts for FJV1845

FJV1845 Summary of contents

Page 1

... Base-Emitter On Voltage BE V (sat) Collector-Emitter Saturation Voltage CE f Current Gain Bandwidth Product T C Output Capacitance ob h Classification FE2 Classification h FE2 ©2002 Fairchild Semiconductor Corporation FJV1845 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition V =120V =5V ...

Page 2

... I [mA], COLLECTOR CURRENT C Figure 3. DC current Gain [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1 0 ...

Page 3

... Typical Characteristics 100 10 1 0.1 0.01 0.4 0.5 0.6 0.7 V [V], BASE-EMITTER VOLTAGE BE Figure 7. Collector Current vs. Base-Emitter Voltage ©2002 Fairchild Semiconductor Corporation (Continued) 500 Pulse Test 400 300 200 100 0 0.8 0 Figure 8. Power Derating 50 75 100 125 150 175 o [ C], CASE TEMPERATURE a Rev. B1, August 2002 ...

Page 4

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2002 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. B1, August 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

Related keywords