FDC8886 Fairchild Semiconductor, FDC8886 Datasheet
FDC8886
Available stocks
Related parts for FDC8886
FDC8886 Summary of contents
Page 1
... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .886 FDC8886 ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 ® MOSFET General Description = 6.5 A This N-Channel D Semiconductor‘s advanced Power Trench = 6 been optimized for r ...
Page 2
... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2 N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. ©2012 Fairchild Semiconductor Corporation FDC8886 Rev. °C unless otherwise noted J Test Conditions = 250 μA, V ...
Page 3
... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2012 Fairchild Semiconductor Corporation FDC8886 Rev. °C unless otherwise noted J 3.5 3 2.5 2 1.0 μ s 0.5 1.2 1.6 2 ...
Page 4
... 175 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDC8886 Rev. °C unless otherwise noted J 500 = 100 100 ...
Page 5
... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.005 - Figure 13. ©2012 Fairchild Semiconductor Corporation FDC8886 Rev. °C unless otherwise noted J SINGLE PULSE 175 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
Page 6
... Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 6 www.fairchildsemi.com ...
Page 7
... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FDC8886 Rev.C3 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...