FDT86256 Fairchild Semiconductor, FDT86256 Datasheet

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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 86256 FDT86256 ©2011 Fairchild Semiconductor Corporation FDT86256 Rev. C ® MOSFET General Description = 1.2 A This N-Channel MOSFET is produced using Fairchild D Semiconductor’s advanced PowerTrench = 1.0 A been especially tailored to minimize the on-state resistance and D switching loss ...

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... Starting ° mH The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDT86256 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

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... DUTY CYCLE = 0.5% MAX 1 1.0 0 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDT86256 Rev °C unless otherwise noted 5.5 V μ 4000 3000 2000 1000 50 75 ...

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... SINGLE PULSE T = MAX RATED 118 C/W θ 0.005 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDT86256 Rev °C unless otherwise noted J 100 0.5 0.9 1.2 1.8 1.6 1.4 1 1.0 0 100 ...

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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0. Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDT86256 Rev °C unless otherwise noted J SINGLE PULSE 118 C/W θ RECTANGULAR PULSE DURATION (sec ...

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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDT86256 Rev PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...