FDMB3900AN Fairchild Semiconductor, FDMB3900AN Datasheet

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FDMB3900AN

Manufacturer Part Number
FDMB3900AN
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDMB3900AN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMB3900AN
Quantity:
190
©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMB3900AN
Dual N-Channel Power Trench
25 V, 7.0 A, 23 mΩ
Features
V
V
I
P
T
R
R
D
J
DS
GS
D
θJA
θJA
Max r
Max r
Fast switching speed
Low gate charge
High performance trench technology for extremely low r
High power and current handling capability
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
3900
Pin 1
= 23 mΩ at V
= 33 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
MicroFET 3X1.9
GS
GS
FDMB3900AN
= 10 V, I
= 4.5 V, I
-Continuous
-Pulsed
Device
D
D
= 7.0 A
= 5.5 A
T
A
= 25 °C unless otherwise noted
Parameter
MicroFET 3X1.9
®
Package
DS(on)
MOSFET
1
T
T
T
D2
D2
D1
D1
A
A
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery
powered applications where the low in-line power loss and fast
switching are required.
A
= 25 °C
= 25 °C
= 25 °C
5
6
7
8
TM
Reel Size
7 ’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
Q2
Q1
Tape Width
8 mm
-55 to +150
Ratings
±20
165
7.0
1.6
0.8
25
28
80
4
3
2
1
G2
S2
G1
S1
December 2011
www.fairchildsemi.com
3000 units
Quantity
®
process
Units
°C/W
°C
W
V
V
A

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FDMB3900AN Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient θJA R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3900 FDMB3900AN ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 ® TM MOSFET General Description = 7.0 A These N-Channel Logic Level MOSFETs are produced using D Fairchild Semiconductor’s advanced PowerTrench = 5 that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Reverse Recovery Charge rr NOTES determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μ ...

Page 3

... DUTY CYCLE = 0.5%MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev. 25°C unless otherwise noted 3 μ 100 125 150 ...

Page 4

... AMBIENT TEMPERATURE A Figure 9. Maximum Continuous Drain Current vs Ambient Temperature 300 100 Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev. 25°C unless otherwise noted J 900 800 700 600 DS 500 400 300 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev. 25°C unless otherwise noted J SINGLE PULSE 165 C/W θ RECTANGULAR PULSE DURATION (sec ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMB3900AN Rev.C1 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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