FDMA3028N Fairchild Semiconductor, FDMA3028N Datasheet

no-image

FDMA3028N

Manufacturer Part Number
FDMA3028N
Description
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA3028N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
FDMA3028N
Dual N-Channel PowerTrench
30 V, 3.8 A, 68 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
D
DS
GS
D
J
θJA
Max r
Max r
Max r
Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
328
= 68 mΩ at V
= 88 mΩ at V
= 123 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Thermal Resistance for Single Operation, Junction to Ambient
Thermal Resistance for Dual Operation, Junction to Ambient
Top
MicroFET 2x2
GS
GS
GS
= 4.5 V, I
= 2.5 V, I
FDMA3028N
= 1.8 V, I
-Pulsed
Device
PIN 1
D
D
D
= 3.8 A
= 3.4 A
= 2.9 A
T
D1
A
S1
= 25 °C unless otherwise noted
D1
Bottom
Parameter
G2
G1
MicroFET 2X2
®
S2
D2
Package
MOSFET
D2
1
General Description
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
Reel Size
G1
S1
D2
7 ’’
applications.
(Note 1d)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1e)
(Note 1f)
1
2
3
Tape Width
It
8 mm
features
-55 to +150
Ratings
173
151
160
133
±12
3.8
1.5
0.7
30
16
86
69
two
5
4
6
www.fairchildsemi.com
D1
G2
S2
3000 units
June 2011
Quantity
independent
Units
°C/W
°C
W
V
V
A

Related parts for FDMA3028N

FDMA3028N Summary of contents

Page 1

... Thermal Resistance for Dual Operation, Junction to Ambient Package Marking and Ordering Information Device Marking Device 328 FDMA3028N ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 ® MOSFET General Description This device is designed specifically as a single package solution = 3 for dual switching requirements in cellular handset and other = 3 ...

Page 2

... Gate to Drain “Miller” Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev. °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... R = 133 C/W when mounted on a 30mm θJA 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev. °C unless otherwise noted J 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. R pad copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev. 25°C unless otherwise noted J 2.5 2.0 1.5 1.0 μ s 0.5 1.5 2.0 200 150 100 100 125 150 0.1 ...

Page 5

... Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.005 - Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev. 25°C unless otherwise noted J 500 = 100 100 μ 100 ...

Page 6

... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

Related keywords