FDP085N10A_F102 Fairchild Semiconductor, FDP085N10A_F102 Datasheet

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FDP085N10A_F102

Manufacturer Part Number
FDP085N10A_F102
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2011 Fairchild Semiconductor Corporation
FDP085N10A_F102 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
D
DM
FDP085N10A_F102
N-Channel PowerTrench
100V, 96A, 8.5mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
J
L
DSS
GSS
AS
D
θJC
θJA
, T
R
Symbol
Symbol
DS(on)
DS(on)
STG
= 7.35mΩ ( Typ.)@ V
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
G
D
S
GS
= 10V, I
TO-220
D
T
= 96A
C
®
= 25
MOSFET
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
= 25
o
C)
C
C
1
= 25
= 100
o
General Description
This
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
C
o
C)
o
C)
N-Channel
(Note 1)
(Note 2)
(Note 3)
MOSFET
G
is
D
S
-55 to +175
produced
Ratings
Ratings
1.25
100
±20
384
269
188
300
62.5
6.0
96
68
0.8
May 2011
using
www.fairchildsemi.com
Fairchild
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

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FDP085N10A_F102 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2011 Fairchild Semiconductor Corporation FDP085N10A_F102 Rev. A ® MOSFET General Description = 96A This N-Channel D Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... G J ≤ di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP085N10A_F102 Rev. A Package Reel Size TO-220 unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FDP085N10A_F102 Rev. A Figure 2. Transfer Characteristics μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage = 10V GS = 20V GS 300 400 Figure 6 ...

Page 4

... 175 Single Pulse 0 Drain-Source Voltage [V] DS Figure 11. Eoss vs. Drain to Soure Voltage 2.5 2.0 1.5 1.0 0.5 0 Drain to Source Voltage DS FDP085N10A_F102 Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 *Notes μ 250 A D 0.5 80 120 160 200 Figure 10. Maximum Drain Current 100 μ ...

Page 5

... Typical Performance Characteristics 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDP085N10A_F102 Rev. A (Continued) Figure 13. Transient Thermal Response Curve - Rectangular Pulse Duration [sec *Notes (t) = 0.8 C/W Max. θ Duty Factor (t) θ www ...

Page 6

... FDP085N10A_F102 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP085N10A_F102 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 8

... Package Dimensions FDP085N10A_F102 Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP085N10A_F102 Rev. A Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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