FQD7N20L Fairchild Semiconductor, FQD7N20L Datasheet - Page 3

• Manufacturer Part Number: FQD7N20L
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor International
Typical Characteristics
800
600
400
200
10
10
10
4
3
2
1
0
0
-1
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
10 V
3.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
6
0
C
C
C
oss
rss
iss
V
GS
V
= 10V
GS
9
= 5V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
ds
gd
1
C
+ C
+ C
= 25℃
12
※ Notes :
10
gd
1. V
2. f = 1 MHz
gd
1
(C
GS
ds
J
= shorted)
= 25℃
= 0 V
15
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25℃
150℃
Figure 2. Transfer Characteristics
0.4
150℃
Variation vs. Source Current
2
3
0.6
V
V
V
DS
Q
and Temperature
GS
SD
-55℃
25℃
V
= 160V
G
DS
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
= 100V
0.8
DS
4
= 40V
6
1.0
6
9
1.2
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
DS
GS
= 30V
12
8
= 0V
D
1.6
= 6.5 A
Rev. A3, October 2008
1.8
10
15