FQU5N60C Fairchild Semiconductor, FQU5N60C Datasheet - Page 3

• Manufacturer Part Number: FQU5N60C
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1000
800
600
400
200
10
10
6
5
4
3
2
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-2
0
1
0
10
Figure 3. On-Resistance Variation vs
10
-1
-1
Figure 1. On-Region Characteristics
Top :
Bottom : 4.5 V
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
2
V
V
DS
DS
I
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
D
, Drain Current [A]
10
10
4
0
0
C
C
C
oss
iss
rss
V
GS
= 10V
6
C
C
C
V
iss
oss
rss
GS
= C
= C
= C
= 20V
10
10
gs
gd
ds
※ Notes :
※ Note : T
1
+ C
1
+ C
1. 250 μ s Pulse Test
2. T
8
gd
※ Notes ;
gd
C
1. V
2. f = 1 MHz
(C
= 25 ℃
ds
GS
J
= shorted)
= 25 ℃
= 0 V
10
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
o
C
Variation with Source Current
0.4
150
o
C
4
4
V
V
150℃
Q
GS
SD
and Temperature
G
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
V
25℃
V
V
DS
DS
DS
= 480V
= 300V
= 120V
-55
0.8
6
8
o
C
※ Note : I
D
1.0
= 4.5A
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
DS
1. V
2. 250 μ s Pulse Test
12
8
= 40V
GS
= 0V
1.2
Rev. A1, October 2008
10
1.4
16