FDD3N50NZ Fairchild Semiconductor, FDD3N50NZ Datasheet

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FDD3N50NZ

Manufacturer Part Number
FDD3N50NZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
FDD3N50NZF
Manufacturer:
FSC
Quantity:
312
©2011 Fairchild Semiconductor Corporation
FDD3N50NZ Rev. C0
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD3N50NZ
N-Channel MOSFET
500V, 2.5A, 2.5
Features
• R
• Low Gate Charge ( Typ. 6.2nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 2.1 ( Typ.)@ V
( Typ. 2.5pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Peak Diode Recovery dv/dt
G
S
GS
= 10V, I
D-PAK
D
= 1.25A
T
C
= 25
D
o
Parameter
Parameter
C unless otherwise noted*
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C)
1
C
C
= 25
= 100
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C
o
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDD3N50NZ
-55 to +150
Ratings
500
±25
114
300
3.1
2.5
1.5
2.5
0.3
90
10
10
40
4
UniFET-II
November 2011
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDD3N50NZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2011 Fairchild Semiconductor Corporation FDD3N50NZ Rev. C0 Description = 1.25A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... DD G  2.5A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Dual Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDD3N50NZ Rev. C0 Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250 ...

Page 3

... Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 5. Capacitance Characteristics FDD3N50NZ Rev. C0 Figure 2. Transfer Characteristics Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com ...

Page 4

... Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 9. Maximum Safe Operating Area vs. Case Temperature FDD3N50NZ Rev. C0 (Continued) Figure 8. On-Resistance Variation Figure 10. Maximum Drain Current Figure 11. Transient Thermal Response Curve P 4 vs. Temperature www.fairchildsemi.com ...

Page 5

... FDD3N50NZ Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDD3N50NZ Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDD3N50NZ Rev. C0 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD3N50NZ Rev. C0 ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...

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