FQT1N60C Fairchild Semiconductor, FQT1N60C Datasheet - Page 4

• Manufacturer Part Number: FQT1N60C
• Manufacturer: Fairchild Semiconductor

FQT1N60C Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
10
10
10
10
-1
-2
-3
1.2
1.1
1.0
0.9
0.8
0
10
-100
0
vs. Temperature
-50
Operation in This Area
is Limited by R
V
DS
T
10
J
, Drain-Source Voltage [V]
, Junction Tem perature [
1
0
※
DS(on)
1. T
2. T
3. Single Pulse
1 0
1 0
1 0
1 0
Notes :
- 1
C
J
1 0
2
1
0
= 150
= 25
- 5
0 . 0 1
0 . 0 2
o
0 . 0 5
D = 0 . 5
50
C
o
0 . 1
0 .2
C
Figure 11. Transient Thermal Response Curve
DC
1 0
1 s
100 ms
10
- 4
100
2
o
C]
10 ms
※
s in g le p u ls e
1. V
2. I
t
N otes :
1
1 0
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
D
1 ms
G S
= 250 µA
- 3
= 0 V
150
100
µ
s
1 0
10
200
(Continued)
- 2
3
1 0
- 1
4
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※
0
-100
P
1 . Z
2 . D u ty F a c to r , D = t
3 . T
DM
N o te s :
θ J C
J M
( t) = 6 0
- T
1 0
C
vs. Case Temperature
t
50
1
-50
= P
1
t
2
vs. Temperature
℃
D M
/W M a x .
* Z
T
T
1
C
1 0
J
/t
θ J C
, Case Temperature [
, Junction Temperature [
2
0
( t)
2
75
1 0
50
3
100
100
°
C]
o
C]
125
※
1. V
2. I
Notes :
150
D
www.fairchildsemi.com
GS
= 0.1 A
= 10 V
200
150