FDB14N30 Fairchild Semiconductor, FDB14N30 Datasheet - Page 3

• Manufacturer Part Number: FDB14N30
• Description: These N–Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDB14N30 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
2000
1000
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
10
10
10
-1
2
1
0
10
0
0
10
Drain Current and Gate Voltage
-1
-1
Top :
Bottom : 5.5 V
5
15.0 V
10.0 V
C
8.0 V
7.0 V
6.5 V
6.0 V
V
oss
C
GS
C
iss
10
rss
V
V
DS
DS
15
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
20
25
V
GS
= 10V
C
C
C
30
iss
oss
rss
= C
= C
= C
gs
gd
10
ds
* Note : T
10
+ C
+ C
1
* Notes :
35
1. 250
2. T
1
gd
gd
(C
C
V
* Note :
ds
= 25
J
GS
μ
1. V
2. f = 1 MHz
= 25
= shorted)
s Pulse Test
40
= 20V
o
GS
C
o
C
= 0 V
45
3
10
10
10
12
10
10
10
10
2
1
0
0.2
8
6
4
2
0
2
1
0
0
2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
2
150
Variation vs. Source Current
0.6
25
o
4
C
4
150
o
C
25
0.8
o
C
o
V
V
C
SD
Q
and Temperatue
GS
6
, Source-Drain voltage [V]
G
1.0
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
6
8
V
1.2
= 240V
DS
-55
V
= 150V
DS
o
10
1.4
C
= 60V
1.6
8
12
1.8
14
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
* Note : I
2.0
DS
10
GS
= 40V
μ
16
s Pulse Test
μ
= 0V
s Pulse Test
D
2.2
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= 14A
18
2.4
12
20