FDD6N25 Fairchild Semiconductor, FDD6N25 Datasheet
FDD6N25
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FDD6N25 Summary of contents
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... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDD6N25 / FDU6N25 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... G ≤ 4.4A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD6N25 / FDU6N25 Rev. A Package Reel Size D-PAK 380mm D-PAK 380mm I-PAK - T = 25°C unless otherwise noted ...
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... Figure 5. Capacitance Characteristics 400 350 C 300 oss C iss 250 200 150 100 C rss Drain-Source Voltage [V] DS FDD6N25 / FDU6N25 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 10V ...
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... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [ FDD6N25 / FDU6N25 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FDD6N25 / FDU6N25 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FDD6N25 / FDU6N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A D-PAK 7 www.fairchildsemi.com ...
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... Mechanical Dimensions FDD6N25 / FDU6N25 Rev. A I-PAK 8 www.fairchildsemi.com ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ ...