FQB34N20L Fairchild Semiconductor, FQB34N20L Datasheet - Page 3

• Manufacturer Part Number: FQB34N20L
• Manufacturer: Fairchild Semiconductor

©2008 Fairchild Semiconductor International
Typical Characteristics
7000
6300
5600
4900
4200
3500
2800
2100
1400
0.25
0.20
0.15
0.10
0.05
0.00
700
10
10
10
0
2
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 3.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
30
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
0
V
GS
C
C
C
iss
oss
rss
= 10V
60
V
GS
= 5V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
= C
= C
= C
10
90
※ Note : T
C
gs
gd
ds
1
= 25℃
+ C
+ C
10
gd
※ Notes :
gd
1
1. V
2. f = 1 MHz
(C
ds
J
GS
= 25℃
= shorted)
= 0 V
120
10
10
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
2
1
0
-1
2
1
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
150℃
0.4
150℃
Variation vs. Source Current
20
2
V
DS
0.6
= 160V
V
V
25℃
V
DS
GS
Q
and Temperature
SD
= 100V
G
-55℃
V
40
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
DS
0.8
= 40V
4
1.0
60
6
1.2
80
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
1.4
※ Note : I
DS
GS
= 30V
= 0V
8
100
D
1.6
= 34 A
Rev. A1, Oct 2008
120
1.8
10