FQU10N20C Fairchild Semiconductor, FQU10N20C Datasheet - Page 3

• Manufacturer Part Number: FQU10N20C
• Manufacturer: Fairchild Semiconductor

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
800
600
400
200
10
10
1.5
1.0
0.5
0.0
-1
0
1
0
10
10
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs
-1
0
-1
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
※ Note ;
1. V
2. f = 1 MHz
Drain Current and Gate Voltage
GS
10.0 V
15.0 V
= 0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
10
I
D
, Drain Current [A]
0
0
V
C
C
C
GS
oss
rss
iss
= 10V
15
※ Notes :
20
C
C
C
1. 250 μ s Pulse Test
2. T
iss
oss
rss
= C
= C
= C
C
10
10
= 25 ℃
gs
※ Note : T
gd
ds
1
1
+ C
+ C
V
gd
GS
gd
25
(C
= 20V
ds
J
= 25 ℃
= shorted)
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
Variation with Source Current
0.4
150
4
o
C
150℃
4
V
0.6
V
Q
and Temperature
GS
SD
G
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
8
, Total Gate Charge [nC]
V
DS
25℃
V
-55
= 160V
DS
0.8
o
V
= 100V
C
DS
12
= 40V
6
1.0
16
※ Notes :
1. V
2. 250 μ s Pulse Test
1.2
※ Notes :
1. V
2. 250 μ s Pulse Test
DS
8
※ Note : I
= 40V
GS
= 0V
20
1.4
D
= 9.5A
Rev. A2, January 2009
10
1.6
24