FQD2N60C Fairchild Semiconductor, FQD2N60C Datasheet - Page 3

• Manufacturer Part Number: FQD2N60C
• Manufacturer: Fairchild Semiconductor

FQD2N60C/FQU2N60C Rev. B3
Typical Performance Characteristics
10
10
500
450
400
350
300
250
200
150
100
10
Figure 5. Capacitance Characteristics
50
Figure 3. On-Resistance Variation vs.
-1
-2
0
0
10
Figure 1. On-Region Characteristics
10
12
10
8
6
4
2
0
-1
-1
Top :
Bottom : 4.5 V
0
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
1
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
0
D
0
, Drain Current [A]
2
C
C
C
oss
iss
rss
V
GS
3
= 10V
C
C
C
iss
oss
rss
10
= C
= C
10
= C
※
1
※
1
1. 250µ s Pulse Test
2. T
gs
gd
ds
Notes :
Note : T
+ C
+ C
V
C
4
= 25 ℃
GS
gd
gd
(C
※
= 20V
J
1. V
2. f = 1 MHz
ds
= 25 ℃
Notes ;
= shorted)
GS
= 0 V
5
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
12
10
10
10
10
8
6
4
2
0
-1
1
0
-1
0
0
0.2
2
25
Variation vs. Source Current
o
C
150
0.4
o
2
C
and Temperatue
4
V
V
Q
GS
SD
150 ℃
G
0.6
V
V
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
DS
DS
V
DS
= 300V
= 480V
4
25 ℃
= 120V
-55
0.8
6
o
C
※
Note : I
6
※
D
= 2A
1. V
2. 250µ s Pulse Test
1.0
Notes :
※
1. V
2. 250µ s Pulse Test
GS
Notes :
= 0V
DS
8
= 40V
8
1.2
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1.4
10
10