FQD12N20L Fairchild Semiconductor, FQD12N20L Datasheet - Page 3
FQD12N20L
Manufacturer Part Number
FQD12N20L
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FQD12N20L.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD12N20L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FQD12N20LTM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
Typical Characteristics
1800
1500
1200
10
1.5
1.2
0.9
0.6
0.3
0.0
900
600
300
10
10
0
-1
1
0
10
10
0
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
-1
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
V
6
GS
V
V
DS
DS
12
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
, Drain Current [A]
0
10
V
0
GS
C
C
C
= 10V
oss
iss
rss
18
V
GS
= 5 V
24
C
C
C
※ Notes :
iss
oss
rss
1. 250 μ s Pulse Test
2. T
= C
= C
= C
10
C
gs
gd
ds
= 25 ℃
1
+ C
+ C
10
gd
gd
(C
1
30
※ Notes :
ds
1. V
2. f = 1 MHz
= shorted)
GS
= 0 V
36
10
10
10
10
12
10
10
10
8
6
4
2
0
-1
1
0
-1
1
0
0.2
0
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
150℃
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
5
150℃
2
0.6
V
V
Q
V
and Temperature
25℃
GS
DS
-55℃
SD
G
10
, Gate-Source Voltage [V]
V
, Total Gate Charge [nC]
, Source-Drain voltage [V]
= 160V
DS
0.8
= 100V
V
4
DS
= 40V
1.0
15
6
1.2
20
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
1.4
※ Note : I
DS
GS
= 0V
= 30V
8
25
D
1.6
= 11.6 A
Rev. A2, January 2009
1.8
10
30