IRF730B Fairchild Semiconductor, IRF730B Datasheet

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IRF730B

Manufacturer Part Number
IRF730B
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2001 Fairchild Semiconductor Corporation
IRF730B/IRFS730B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies and
electronic lamp ballasts based on half bridge.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
IRF Series
TO-220
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25° C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 5.5A, 400V, R
• Low gate charge ( typical 25 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
IRFS Series
TO-220F
IRF730B
IRF730B
0.58
1.71
62.5
DS(on)
5.5
3.5
0.5
22
73
-55 to +150
= 1.0
400
330
300
5.5
7.3
5.5
30
@V
G
IRFS730B
IRFS730B
5.5 *
3.5 *
22 *
3.31
62.5
GS
0.3
38
--
= 10 V
November 2001
D
S
Rev. A, November 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
A
A
A
V
A
V

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IRF730B Summary of contents

Page 1

... C) C Parameter November 2001 = 1 DS(on IRF730B IRFS730B Units 400 V 5.5 5 3.5 3 330 mJ 5.5 A 7.3 mJ 5.5 V/ 0.58 0.3 W/°C -55 to +150 °C 300 °C IRF730B IRFS730B Units 1.71 3.31 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, November 2001 ...

Page 2

... V = 50V 5.5A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1500 C iss 1000 C oss 500 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation Notes : 1. 250 s Pulse Test 25 Figure 2. Transfer Characteristics 10V GS ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for IRF730B Case Temperature [  ] T C Figure 10. Maximum Drain Current vs Case Temperature ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1 ...

Page 5

... Typical Characteristics Figure 11. Transient Thermal Response Curve for IRF730B Figure 11-2. Transient Thermal Response Curve for IRFS730B © ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2001 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, November 2001 ...

Page 9

... Package Dimensions (Continued) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, November 2001 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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