FGA15N120AND Fairchild Semiconductor, FGA15N120AND Datasheet
FGA15N120AND
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FGA15N120AND Summary of contents
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... 100 100 100 C C Parameter IGBT = 2 15A CE(sat 210ns (typ FGA15N120AND Units 1200 200 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.63 C/W -- 2.88 C C/W FGA15N120AND Rev. A ...
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... V -- 2 1150 -- pF -- 120 -- 310 -- 120 ns -- 3.27 4 0.6 0 3.68 5 310 -- 120 180 Typ. Max. Units -- 1 210 330 ns -- 280 -- -- 2835 6600 nC -- 4340 -- FGA15N120AND Rev. A ...
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... Common Emitter T = 125℃ [V] GE Fig 6. Saturation Voltage vs 15V 2 4 Collector-Emitter Voltage, V [V] CE Vcc = 600V load Current : peak of square wave 1 10 100 1000 Frequency [kHz] 24A 15A Gate-Emitter Voltage FGA15N120AND Rev ...
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... 125℃ Gate Resistance Resistance = ± 15V = 600V Eon Eoff Gate Resistance ± 15V 25℃ = 125℃ td(off Collector Current, I [A] C Collector Current FGA15N120AND Rev ...
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... Rectangular Pulse Duration [sec] = 40Ω = 25℃ 600V 400V Vcc = 200V 100 Gate Charge, Q [nC] g Safe Operating Area V = 15V 125℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + FGA15N120AND Rev. A 120 ...
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... 125 ℃ ℃ 1.6 2.0 2.4 [V] F Fig 19. Reverse Recovery Current 400 300 200 100 [A] F Fig 21. Reverse Recovery Time di/dt = 200A/ s di/dt = 100A Forward Current , I [A] F di/dt = 100A/ s di/dt = 200A Forward Current , I [A] F FGA15N120AND Rev. A ...
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... Package Dimension TO-3P (FS PKG CODE ) 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2003 Fairchild Semiconductor Corporation 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters FGA15N120AND Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...