FGA70N33BTD Fairchild Semiconductor, FGA70N33BTD Datasheet
FGA70N33BTD
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FGA70N33BTD Summary of contents
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... Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *I _pulse limited by max Tj C ©2008 Fairchild Semiconductor Corporation FGA70N33BTD Rev. A General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP = 70A C applications where low conduction and switching losses are essential ...
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... Rise Time r t Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGA70N33BTD Rev. A Packaging Package Type Qty per Tube TO-3P Tube T = 25°C unless otherwise noted C Test Conditions = 0V 250µ 0V, I ...
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... Electrical Characteristics of the Diode Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr I Diode Peak Reverse Recovery rr Current Q Diode Reverse Recovery Charge rr FGA70N33BTD Rev 25°C unless otherwise noted C Test Conditions 10A 125 ...
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... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2.0 Common Emitter V = 15V GE 1.8 1.6 1.4 1.2 1.0 0 Collector-EmitterCase Temperature, T FGA70N33BTD Rev. A Figure 2. Typical Output Characteristics 220 12V 176 10V 132 [V] CE Figure 4. Transfer Characteristics 220 Common Emitter Vce = 20V ...
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... Gate Charge, Q Figure 11. Turn-on Characteristics vs. Gate Resistance 200 100 d(on) Common Emitter Gate Resistance, R FGA70N33BTD Rev. A Figure 8. Capacitance Characteristics GE 10000 Common Emitter 125 C C 1000 100 [V] GE Figure 10. SOA Characteristics 500 100 ...
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... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics 400 100 10 Safe Operating Area 15V 125 Collector-Emitter Voltage, V FGA70N33BTD Rev. A Figure 14. Turn-off Characteristics vs. 1000 t r 100 10 t d(on [A] C Figure 16. Switching Loss vs. Collector Current ...
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... Forward Current, I Figure 21. Reverse Recovery Time 40 30 µ 200A/ s di/dt = 100A Forward Current, I Figure 22.Transient Thermal Impedance of IGBT 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1E-3 1E-5 FGA70N33BTD Rev. A Figure 20. Stored Charge µ [A] F µ [A] F 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec] 7 µ 200A/ s µ ...
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... Mechanical Dimensions FGA70N33BTD Rev. A TO-3P 8 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FGA70N33BTD Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...