FJZ733 Fairchild Semiconductor, FJZ733 Datasheet

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FJZ733

Manufacturer Part Number
FJZ733
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2003 Fairchild Semiconductor Corporation
Low Frequency Amplifier
• Collector-Base Voltage : V
• Complement to FJZ945
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
NF
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(on)
Classification
Classification & Marking
Marking
Symbol
R
h
FE
θJA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Thermal Resistance, Junction to Ambient
CBO
40 ~ 80
= -60V
A2
R
T
C
T
=25°C unless otherwise noted
a
=25°C unless otherwise noted
T
Parameter
a
=25°C unless otherwise noted
Parameter
Marking
70 ~ 140
FJZ733
A3
O
I
I
I
V
V
V
I
V
V
V
V
f=1MHz, Rs=10kΩ
C
C
E
C
CB
EB
CE
CE
CE
CB
CE
= -100µA, I
= -10mA. I
= -100mA, I
= -10µA. I
A 1
= -5V, I
= --60V, I
= -6V, I
= -6V, I
= -6V, I
= -10V, I
= -6V, I
Test Condition
C
C
C
C
C
C
=0
B
= -1mA
= -1mA
= -10mA
E
= -0.3mA
E
E
=0
=0
B
= 0, f=1MHz
=0
=0
120 ~ 240
= -10mA
A1
Y
1. Base 2. Emitter 3. Collector
-0.50
Min.
-60
-50
- 5
40
50
200 ~ 400
3
-55 ~ 150
Max.
1250
Ratings
A4
G
-150
100
150
-60
-50
-5
-0.18
-0.62
Typ.
180
2.8
6.0
1
-0.80
Max.
-100
-100
700
-0.3
SOT-623F
350 ~ 700
2
Units
°C/W
Units
A5
mW
L
mA
Rev. B1, July 2003
°C
°C
V
V
V
Units
MHz
nA
nA
pF
dB
V
V
V
V
V

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FJZ733 Summary of contents

Page 1

... Noise Figure Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient θJA h Classification & Marking FE Classification Marking A2 ©2003 Fairchild Semiconductor Corporation FJZ733 T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Test Condition I = -100µ -10mA ...

Page 2

... C 0 Ta=125 C -0.1 -1E-3 -0.01 I [A], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage -100 -80 -60 0 125 C -40 -20 -0 -0.0 -0.2 -0.4 -0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2003 Fairchild Semiconductor Corporation A µ = -350 A µ -300 A µ -250 A 100 µ -200 A µ -150 A µ -100 A µ ...

Page 3

... Typical Characteristics 1000 100 [mA], COLLECTOR CURRENT C Figure 7. Current Gain Bandwidth Product ©2003 Fairchild Semiconductor Corporation (Continued -6V CE -10 Rev. B1, July 2003 ...

Page 4

... Package Dimensions ©2003 Fairchild Semiconductor Corporation SOT-623F Dimensions in Millimeters Rev. B1, July 2003 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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