NDH854P Fairchild Semiconductor, NDH854P Datasheet
NDH854P
Manufacturer Part Number
NDH854P
Description
P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDH854P.pdf
(8 pages)
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Manufacturer:
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4 800
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NDH854P
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FAIRCHILD/仙童
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20 000
Absolute Maximum Ratings
____________________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
NDH854P
P-Channel Enhancement Mode Field Effect Transistor
General Description
,T
SuperSOT
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
TM
-8 P-Channel enhancement mode power field
- Pulsed
T
A
= 25°C unless otherwise noted
and other battery
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
Features
-5.1 A, -30 V. R
Proprietary SuperSOT
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
R
5
6
7
8
DS(ON)
DS(ON)
NDH854P
-55 to 150
-5.1
±20
-30
-15
1.8
0.9
= 0.052
70
20
= 0.032
1
TM
-8 package design using copper
@ V
@ V
GS
GS
= -4.5V
= -10 V
DS(ON)
4
3
2
1
.
.
NDH854P Rev.D
May 1997
Units
°C/W
°C/W
W
°C
V
V
A
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Datasheet:
NDH854P Summary of contents
Page 1
... May 1997 = 0.032 @ V = -10 V DS(ON 0.052 @ V = -4.5V . DS(ON package design using copper . DS(ON NDH854P Units -30 ±20 -5.1 -15 1.8 1 0.9 -55 to 150 70 °C/W 20 °C/W NDH854P Rev °C ...
Page 2
... -5 - Min Typ Max Units - µ -10 µA 100 nA -100 -0.8 -1.1 -1.6 0.026 0.032 o 0.038 0.057 C 0.044 0.052 - 1220 pF 735 pF 290 140 NDH854P Rev.D ...
Page 3
... C/W when mounted on a 0.026 in pad of 2oz copper 135 C/W when mounted on a 0.005 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -1.5 A (Note Min Typ Max Units -1.5 A -0.74 -1 guaranteed NDH854P Rev.D ...
Page 4
... DRAIN CURRENT (A) D Voltage and Drain Current. = -10V 125°C J 25°C -55°C -5 -10 - DRAIN CURRENT (A) D Current and Temperature -250µ JUNCTION TEMPERATURE (°C) J Temperature. -10 -20 - NDH854P Rev.D ...
Page 5
... J 25°C -55° 0 BODY DIODE FORWARD VOLTAGE ( -5. -5V DS -10V GATE CHARGE (nC off t t d(off PULSE WIDTH -15V INVERTED NDH854P Rev.D ...
Page 6
... Maximum Steady-State V = -10V GS = See Note 25° 0.2 0 DRAIN-SOURCE VOLTAGE ( ( See Note 1c JA P(pk ( Duty Cycle NDH854P Rev.D ...
Page 7
... NDH854P Rev.D ...
Page 8
... NDH854P Rev.D ...