FDFMC2P120 Fairchild Semiconductor, FDFMC2P120 Datasheet
FDFMC2P120
Related parts for FDFMC2P120
FDFMC2P120 Summary of contents
Page 1
... FDFMC2P120 Integrated P-Channel PowerTrench General Description FDFMC2P120 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance ...
Page 2
... Typ Max Units –20 V –11 mV/°C µA –1 ±100 nA –0.6 –1.0 –1 mV/°C 101 125 mΩ 145 200 136 180 – 280 Ω 3 –2 A –0.9 –1 FDFMC2P120 Rev.E (W) ...
Page 3
... Parameter Schottky Diode Characteristic V Reverse Voltage R I Reverse Leakage R V Forward Voltage 25°C unless otherwise noted A Test Conditions Min I = 1mA 100 Typ Max Units V µA 100 10 mA 0.32 0.39 V FDFMC2P120 Rev.E (W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFMC2P120 Rev.E ( 1.2 ...
Page 5
... DRAIN TO SOURCE VOLTAGE ( 125 100 REVERSE VOLTAGE ( ( θJA θJA R =145 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDFMC2P120 Rev.E ( ...
Page 6
... NOTES : A. CONFORMS TO JEDEC REGISTRATION M0-229, VARIATION WEEA, DATE 11/2001. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M 1994 FDFMC2P120 Rev.E (W) ...
Page 7
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...