FQB2P25 Fairchild Semiconductor, FQB2P25 Datasheet - Page 3

• Manufacturer Part Number: FQB2P25
• Description: Fqb2p25 / Fqi2p25 250v P-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
400
300
200
100
10
10
15
12
-1
0
0
10
10
9
6
3
0
0.0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : -5.5 V
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
1.5
-V
-V
DS
DS
, Drain-Source Voltage [V]
-I
, Drain-Source Voltage [V]
10
10
D
0
, Drain Current [A]
0
V
C
C
C
GS
oss
rss
iss
= - 20V
3.0
V
GS
= - 10V
C
C
C
iss
oss
rss

Notes :
= C
= C
= C
1. 250  s Pulse Test
2. T
10

Note : T
10
4.5
gs
gd
ds
1
1
C
+ C
+ C
= 25 
gd
gd
(C

Notes :
J
ds
1. V
2. f = 1 MHz
= 25 
= shorted)
GS
= 0 V
6.0
10
10
10
10
12
10
-1
8
6
4
2
0
-1
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
1
Variation vs. Source Current
0.6
4
150

-V
-V
2
Q
and Temperature
GS
SD
25

0.8
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
150

V
DS
V
25

3
1.0
DS
= -200V
V
DS
= -125V
= -50V
6
1.2
4
-55

1.4

Notes :

Notes :
1. V
2. 250  s Pulse Test
5
1. V
2. 250  s Pulse Test

Note : I
8
DS
GS
1.6
= -40V
= 0V
D
6
= -2.3 A
1.8
Rev. A, April 2000
2.0
10
7