DIM200PLM33-F000 Dynex Semiconductor, DIM200PLM33-F000 Datasheet

no-image

DIM200PLM33-F000

Manufacturer Part Number
DIM200PLM33-F000
Description
Igbt Modules - 3300v
Manufacturer
Dynex Semiconductor
Datasheet
FEATURES
APPLICATIONS
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PLM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the lower
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10 s short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PLM33-F000
Note: When ordering, please use the whole part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
10µs Short Circuit Withstand
Soft Punch Through Silicon
Isolated AlSiC Base with AlN substrates
High thermal cycling capability
Choppers
Motor Controllers
Power Supplies
Traction Auxiliaries
.
KEY PARAMETERS
V
V
I
I
*
(measured at the power busbars and not the auxiliary terminals)
C
C(PK)
CES
CE (sat)
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
*
Fig. 1 Chopper circuit diagram
DIM200PLM33-F000
(typ)
(max)
(max)
Outline type code: P
IGBT Chopper Module
DS5864- 1.1 June 2008 (LN26121)
3300V
2.8V
200A
400A
1
/
9

Related parts for DIM200PLM33-F000

DIM200PLM33-F000 Summary of contents

Page 1

... The DIM200PLM33-F000 is a 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the lower arm of the bridge controlled. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...

Page 2

... C case T = 25° 150° C case 10ms 125° Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287 3500V 2600V, 50Hz RMS 1 2 DIM200PLM33-F000 Max. Units 3300 V ±20 V 200 A 400 A 2 6000 V 10 ...

Page 3

... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com AIN AlSiC 33mm 20mm 350 Test Conditions Continuous dissipation – junction to case Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode - Mounting – M6 Electrical connections – M5 DIM200PLM33-F000 Min. Typ. Max. Units - - 48 ° C/ ° C/kW 96 ° C/ ° C/kW ...

Page 4

... GE C case 1ms 200A 200A 125° case V = 25V 0V 1MHz 125° 2500V 10µ L*×di/dt CE(max) CES IEC 60747-9 DIM200PLM33-F000 Min. Typ. Max. Units - - µA 5.5 6 200 400 A 2.9 ...

Page 5

... R dl /dt = 1600A/µs F Diode arm Test Conditions Min 200A ±15V 1800V 16.5 G(ON) G(OFF) L 100nH 56nF 7.5 G(ON 200A 1800V /dt = 1600A/µs F Diode arm DIM200PLM33-F000 Typ. Max. Units - 1950 - ns - 170 - ns - 220 - mJ - 1180 - ns - 225 - µC - 290 - µC - 144 ...

Page 6

... SEMICONDUCTOR Fig.3 Typical output characteristics Fig.5 Typical switching energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com Fig.4 Typical output characteristics Fig.6 Typical switching energy vs gate resistance DIM200PLM33-F000 ...

Page 7

... SEMICONDUCTOR Fig.7 Diode typical forward characteristics Fig.9 Diode reverse bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com DIM200PLM33-F000 Fig.8 Reverse bias safe operating area Fig.10 Transient thermal impedance ...

Page 8

... For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com Nominal weight: 750 g Module outline type code: P DIM200PLM33-F000 ...

Page 9

... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com CUSTOMER SERVICE Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020  Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. DIM200PLM33-F000 ...

Related keywords