FJA3835 Fairchild Semiconductor, FJA3835 Datasheet

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FJA3835

Manufacturer Part Number
FJA3835
Description
Fja3835 Npn Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
©2003 Fairchild Semiconductor Corporation
Power Amplifier
• High Current Capability : I
• High Power Dissipation
• Wide S.O.A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test : PW=20 s
V
V
V
I
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
t
t
t
C
CP
CBO
EBO
T
ON
F
STG
J
STG
FE
CBO
CEO
EBO
C
CE
BE
ob
Symbol
Symbol
CBO
CEO
EBO
(sat)
(sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation (T
Junction Temperature
Storage Temperature
*
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Fall Time
Storage Time
DC Current Gain
C
=8A
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
FJA3835
I
I
I
V
V
V
I
I
V
V
V
I
R
C
C
E
C
C
C
CB
EB
CE
CE
CB
CC
L
=5mA, I
=5mA, I
=10mA, R
=3A, I
=3A, I
=1A=10I
=20
=80V, I
=4V, I
=4V, I
=5V, I
=10V, f=1MHz
=20V,
Test Condition
B
B
=0.3A
=0.3A
C
C
E
C
C
B1
=0
=0
E
=0
=3A
=1A
BE
=0
=-10I
=
B2
1.Base 2.Collector 3.Emitter
1
Min.
200
120
120
8
- 55 ~ 150
Value
200
120
150
16
80
8
8
Typ.
0.26
0.68
6.68
210
30
TO-3P
Max.
250
0.1
0.1
0.5
1.2
Rev. A, December 2003
Units
W
Units
V
V
V
A
A
MHz
C
C
mA
mA
pF
V
V
V
V
V
s
s
s

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FJA3835 Summary of contents

Page 1

... Current Gain Bandwidth Product T C Output Capacitance ob t Turn On Time ON t Fall Time F t Storage Time STG * Pulse Test : PW=20 s ©2003 Fairchild Semiconductor Corporation FJA3835 T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I =5mA =10mA, R ...

Page 2

... COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 100 I MAX. (Pulse MAX. (DC 0.1 Single Pulse o T =25 0.01 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2003 Fairchild Semiconductor Corporation 1000 I = 35mA 100 I = 10mA 5mA 0. 0 0.01 Figure 4. Base-Emitter Saturation Voltage ...

Page 3

... Package Demensions ø3.20 0.10 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2003 Fairchild Semiconductor Corporation TO-3P 15.60 0.20 13.60 0.20 9.60 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters Rev. A, December 2003 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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