FJAF6808D Fairchild Semiconductor, FJAF6808D Datasheet

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FJAF6808D

Manufacturer Part Number
FJAF6808D
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJAF6808DTU
Manufacturer:
MOTOROLA
Quantity:
16
©2001 Fairchild Semiconductor Corporation
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BV
• High Switching Speed : t
• For Color Monitor
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics
Thermal Characteristics
* Pulse Test: PW=20 s, duty Cycle=1% Pulsed
V
V
V
I
I
P
T
T
I
I
I
BV
h
h
V
V
t
t
R
C
CP
CES
CBO
EBO
V
STG
F
FE1
FE2
J
STG
CBO
CEO
EBO
C
CE
BE
*
F
Symbol
Symbol
jC
EBO
*
Symbol
(sat)
(sat)
*
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Base-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Turn On Voltage
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
F
(typ.) =0.1 s
Parameter
Parameter
T
C
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
CBO
=25 C unless otherwise noted
FJAF6808D
= 1500V
V
V
V
I
V
V
I
I
I
V
I
E
C
C
F
B1
CB
CB
EB
CE
CE
CC
=300mA, I
=5A, I
=5A, I
= 4.5A
=1.0A, I
=4V, I
=1400V, R
=800V, I
=5V, I
=5V, I
=200V, I
Test Conditions
B
B
=1.2A
=1.2A
C
C
C
B2
=0
=1A
=5A
C
E
C
= - 2.0A
=0
=0
=4A, R
BE
=0
L
Typ.
=50
1
1.Base 2.Collector 3.Emitter
Min.
4.5
40
6
7
B
- 55 ~ 150
Rating
Max.
1500
Equivalent Circuit
2.5
750
150
16
50
6
8
Typ.
45
typ.
Max.
C
E
200
7.5
1.5
0.2
10
1
5
2
3
TO-3PF
Units
Rev. A, October 2001
C/W
Units
Units
W
V
V
V
A
A
C
C
mA
mA
V
V
V
V
A
s
s

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FJAF6808D Summary of contents

Page 1

... Damper Diode Turn On Voltage Storage Time STG t * Fall Time F * Pulse Test: PW=20 s, duty Cycle=1% Pulsed Thermal Characteristics Symbol R Thermal Resistance, Junction to Case jC ©2001 Fairchild Semiconductor Corporation FJAF6808D = 1500V CBO T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Conditions V =1400V ...

Page 2

... 0.1 0.01 0 [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 125 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER ON VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 100 125 ...

Page 3

... CE Figure 9. Reverse Bias Safe Operating Area C], CASE TEMPERATURE C Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued 0.1 10 100 Figure 8. Resistive Load Switching Time 100 15A 30V 200 (off) = -6V BE ...

Page 4

... Package Demensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. A, October 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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