FJAF6916 Fairchild Semiconductor, FJAF6916 Datasheet

no-image

FJAF6916

Manufacturer Part Number
FJAF6916
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FJAF6916TU
Manufacturer:
FAIRCHILD
Quantity:
627
Part Number:
FJAF6916TU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
High Voltage Color Display Horizontal
Deflection Output
• High Collector-Base Breakdown Voltage : BV
• Low Saturation Voltage : V
• For Color Monitor
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
* Pulse Test: PW=20 s, duty Cycle=1% Pulsed
* Pulse Test: PW=300 s, duty Cycle=2% Pulsed
V
V
V
I
I
P
T
T
I
I
I
BV
BV
BV
h
h
V
V
t
t
R
C
CP
CES
CBO
EBO
STG
F
J
STG
FE1
FE2
CBO
CEO
EBO
C
CE
BE
*
Symbol
Symbol
jC
CBO
CEO
EBO
*
Symbol
(sat)
(sat)
*
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
CE
Parameter
(sat) = 3V (Max.)
Parameter
T
C
T
=25 C unless otherwise noted
C
=25 C unless otherwise noted
Parameter
T
C
CBO
=25 C unless otherwise noted
FJAF6916
= 1700V
V
V
V
I
I
I
V
V
I
I
V
I
C
C
E
C
C
B1
CB
CB
EB
CE
CE
CC
=500 A, I
=500 A, I
=5mA, I
=10A, I
=10A, I
=1.6A, I
=1400V, R
=800V, I
=4V, I
=5V, I
=5V, I
=200V, I
Test Conditions
B
B
C
B
C
C
=2.5A
=2.5A
B2
=0
=0
=1A
=8.5A
C
E
E
C
=0
=0
=-3.2A
=0
=8A, R
BE
=0
L
=25
Typ
1.Base 2.Collector 3.Emitter
1
1700
Min
800
10
6
6
-55 ~ 150
Rating
Max
2.08
1700
800
150
30
60
16
6
Typ
Max
1.5
0.3
10
1
1
9
3
4
TO-3PF
Units
C/W
Rev. B, August 2001
Units
Units
W
V
V
V
A
A
C
C
mA
mA
V
V
V
V
V
A
s
s

Related parts for FJAF6916

FJAF6916 Summary of contents

Page 1

... Base-Emitter Saturation Voltage Storage Time STG t * Fall Time F * Pulse Test: PW=20 s, duty Cycle=1% Pulsed Thermal Characteristics Symbol R Thermal Resistance, Junction to Case jC ©2001 Fairchild Semiconductor Corporation FJAF6916 = 1700V CBO T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Conditions V =1400V ...

Page 2

... I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage 125 0.0 0.2 0.4 0.6 V [V], BASE EMITTER VOLTAGE BE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 100 125 0.1 0.01 0.1 10 100 Figure 4 ...

Page 3

... V [V], COLLECTOR-EMITTER VOLTAGE CE Figure 9. Forward Bias Safe Operating Area 100 C], CASE TEMPERATURE C Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued STG 0 Figure 8. Resistive Load Switching Time 1ms 100ms ...

Page 4

... Package Demensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 0.85 0.03 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Dimensions in Millimeters Rev. B, August 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

Related keywords