KSA709 Fairchild Semiconductor, KSA709 Datasheet
KSA709
Manufacturer Part Number
KSA709
Description
Ksa709 Pnp Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSA709.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
KSA709GTA
Manufacturer:
FAIRCHILD
Quantity:
25 000
©2004 Fairchild Semiconductor Corporation
High Voltage Amplifier
• Collector-Base Voltage : V
• Collector Power Dissipation : P
• Complement to KSC1009
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 350 s, Duty cycle 2%
h
V
V
V
I
P
T
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
FE
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Classification
Classification
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
h
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
FE
Parameter
CBO
= -160V
C
=800mW
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
70 ~ 140
KSA709
O
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
= -100 A, I
= -100 A, I
= -10mA, I
= -200mA, I
= -200mA, I
= -5V, I
= -100V, I
= -2V, I
= -10V, I
= -10V, I
Test Condition
C
C
=0
C
E
B
= -50mA
C
E
=0
=0, f=1MHz
E
B
B
= -50mA
=0
=0
=0
= -20mA
= -20mA
120 ~ 240
Y
1. Emitter 2. Base 3. Collector
-160
-150
1
Min.
70
-8
-55 ~ 150
Ratings
-160
-150
-700
800
150
-8
Typ.
-0.3
-0.9
50
TO-92
200 ~ 400
Max.
-0.1
-0.1
-0.4
-1.0
400
10
G
Units
mW
mA
Rev. B1, April 2004
V
V
V
C
C
Units
MHz
pF
V
V
V
V
V
A
A
Related parts for KSA709
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
KSA709 Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob * Pulse Test: PW 350 s, Duty cycle 2% h Classification FE Classification h FE ©2004 Fairchild Semiconductor Corporation KSA709 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100 -10mA, I ...
Page 2
... V BE(sat) -1 -0.1 V CE(sat) -0.01 -1 -10 I [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 -10 V [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation 1000 100 I = -0.4mA -0.2mA -10 -1000 -100 -10 -1 -100 -1000 0 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, April 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...