SI9926DY Fairchild Semiconductor, SI9926DY Datasheet
SI9926DY
Manufacturer Part Number
SI9926DY
Description
Dual N-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI9926DY.pdf
(5 pages)
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Si9926DY
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Applications
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery protection
Load switch
Power management
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
Semiconductor’s
9926
D2
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
D1
D1
advanced
S2
– Continuous
– Pulsed
Si9926DY
Device
G2
Parameter
S1
PowerTrench
G1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
6.5 A, 20 V.
Optimized for use in battery protection circuits
Low gate charge
10 V
GSS
allows for wide operating voltage range
5
6
7
8
Tape width
R
R
DS(ON)
DS(ON)
12mm
-55 to +150
Q1
Q2
Ratings
6.5
1.6
0.9
20
20
78
40
10
2
1
= 0.030
= 0.043
@ V
@ V
January 2001
4
3
2
1
GS
GS
2500 units
Si9926DY Rev A (W)
= 4.5 V
= 2.5 V.
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
SI9926DY Summary of contents
Page 1
... Reel Size 13’’ January 2001 R = 0.030 @ V = 4.5 V DS(ON 0.043 @ V = 2.5 V. DS(ON) GS allows for wide operating voltage range Ratings Units 6 1.6 1 0.9 -55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units Si9926DY Rev A (W) ...
Page 2
... Typ Max Units mV 100 nA –100 nA 0 mV/ C 0.025 0.030 0.036 0.043 0.035 0.050 700 pF 175 1.2 nC 1.9 nC 1.3 A 0.65 1 135°/W when mounted on a minimum pad. Si9926DY Rev A (W) ...
Page 3
... Source Current and Temperature 2.0V GS 2.5V 3.0V 3.5V 4.0V 4. DRAIN CURRENT ( 1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Si9926DY Rev A ( 1.4 ...
Page 4
... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 1000 Si9926DY Rev A (W) ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...