FJN5471 Fairchild Semiconductor, FJN5471 Datasheet
FJN5471
Related parts for FJN5471
FJN5471 Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE f Current Gain Band Width Product T C Collector Output Capacitance ob Thermal Characteristics Symbol R Thermal Resistance, Junction to Ambient jA ©2002 Fairchild Semiconductor Corporation FJN5471 T =25 C unless otherwise noted C Parameter T =25 C unless otherwise noted C Test Condition I =1mA =100 A, I ...
Page 2
... C o Ta=-40 C 100 10 0 [A], COLLECTOR CURRENT C Figure 3. DC current Gain 10 o Ta=- Ta= Ta=125 C 0.1 0 [A], COLLECTOR CURRENT C Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation =14mA B I =12mA =10mA =8mA B I =6mA =4mA =2mA ...
Page 3
... Typical Characteristics 1.0 0.8 0.6 0.4 0.2 0 C], AM BIEN T TEM PER ATU RE a Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 100 125 150 Rev. A1, August 2002 ...
Page 4
... Fairchild Semiconductor Corporation Rev. A1, August 2002 ...
Page 5
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2000 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, August 2002 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...