HGTP3N60A4D9A Fairchild Semiconductor, HGTP3N60A4D9A Datasheet
HGTP3N60A4D9A
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HGTP3N60A4D9A Summary of contents
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... Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D December 2001 Features • >100kHz Operation At 390V, 3A • 200kHz Operation At 390V, 2.5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at T • Low Conduction Loss • ...
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... On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specifi (Figure SSOA o C, Unless Otherwise Specified ...
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... Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves CASE TEMPERATURE ( C FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified (Continued) SYMBOL TEST CONDITIONS t IGBT and Diode at T d(ON 3A 390V 15V, ...
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... 12V 15V 160 120 COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued 15V 390V 150 ...
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... 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued 125 12V 125 15V FIGURE 10. TURN-ON RISE TIME vs COLLECTOR 15V, T ...
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... FORWARD VOLTAGE (V) EC FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) = 15V GE 100 125 150 o C) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE FREQUENCY = 1MHz 60 80 100 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE ...
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... SINGLE PULSE - FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms L = 1mH R = 50Ω G FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued) 200 390V EC CE 160 120 o 125 ...
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... Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specifi ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...