BC309 Fairchild Semiconductor, BC309 Datasheet - Page 2

• Manufacturer Part Number: BC309
• Description: PNP EPITAXIAL SILICON TRANSISTOR
• Manufacturer: Fairchild Semiconductor

BC307 BC307B BC307C BC308C
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
1. I C = –10 mAdc on the constant base current characteristic, which yields the point I C = –11 mAdc, V CE = –1.0 V.
2
DC Current Gain
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Base–Emitter On Voltage
Current – Gain — Bandwidth Product
Common Base Capacitance
Noise Figure
(I C = –10 Adc, V CE = –5.0 Vdc)
(I C = –2.0 mAdc, V CE = –5.0 Vdc)
(I C = –100 mAdc, V CE = –5.0 Vdc)
(I C = –10 mAdc, I B = –0.5 mAdc)
(I C = –10 mAdc, I B = see Note 1)
(I C = –100 mAdc, I B = –5.0 mAdc)
(I C = –10 mAdc, I B = –0.5 mAdc)
(I C = –100 mAdc, I B = –5.0 mAdc)
(I C = –2.0 mAdc, V CE = –5.0 Vdc)
(I C = –10 mAdc, V CE = –5.0 Vdc, f = 100 MHz)
(V CB = –10 Vdc, I C = 0, f = 1.0 MHz)
(I C = –0.2 mAdc, V CE = –5.0 Vdc, R S = 2.0 k ,
f = 1.0 kHz)
(I C = –0.2 mAdc, V CE = –5.0 Vdc, R S = 2.0 k ,
f = 1.0 kHz, f = 200 Hz)
Characteristic
(T A = 25 C unless otherwise noted) (Continued)
BC307B
BC307C/308C
BC307
BC307B/308B
BC307C/308C
BC307B
BC307C/308C
BC307,B,C
BC308C
BC307,B,C
BC308C
Motorola Small–Signal Transistors, FETs and Diodes Device Data
V CE(sat)
V BE(sat)
V BE(on)
Symbol
C cbo
h FE
NF
f T
–0.55
Min
120
200
420
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–0.10
–0.30
–0.25
–0.62
–0.7
–1.0
Typ
150
270
290
500
180
300
280
320
2.0
2.0
—
—
Max
–0.3
–0.6
–0.7
800
460
800
6.0
—
—
—
—
—
—
—
—
—
10
10
MHz
Unit
Vdc
Vdc
Vdc
dB
pF
—