SGP10N60RUF Fairchild Semiconductor, SGP10N60RUF Datasheet
SGP10N60RUF
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SGP10N60RUF Summary of contents
Page 1
... 100 100 100 C C Parameter IGBT = 100 15V 2 10A CE(sat SGP10N60RUF Units 600 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 1.6 C/W -- 62.5 C/W SGP10N60RUF Rev. A1 ...
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... Measured 5mm from PKG -- Typ. Max. Units -- -- V 0 250 uA -- ± 100 nA 6.0 8.5 V 2.2 2 660 -- pF 115 -- 158 200 ns 141 -- uJ 215 -- uJ 356 500 242 350 ns 161 -- uJ 452 -- uJ 613 860 7 SGP10N60RUF Rev. A1 ...
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... [V] GE Fig 6. Saturation Voltage vs Collector - Emitter Voltage 300V CC Load Current : peak of square wave 1 10 100 1000 Frequency [KHz] 20A 10A Gate - Emitter Voltage SGP10N60RUF Rev. A1 ...
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... Collector Current = ± 15V = 300V Ton Tr 10 100 Gate Resistance ± 15V = 300V Eoff Eon Eoff 10 100 Gate Resistance ± 15V 25℃ ━━ = 125℃ ------ Collector Current, I [A] C SGP10N60RUF Rev ...
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... Fig 17. Transient Thermal Impedance of IGBT = 30 = 25℃ 300 100 V CC 200 Gate Charge Safe Operating Area V = 20V 100℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGP10N60RUF Rev. A1 ...
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... Package Dimension 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2002 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters SGP10N60RUF Rev. A1 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...