GP2400ESM12 Dynex Semiconductor, GP2400ESM12 Datasheet
GP2400ESM12
Related parts for GP2400ESM12
GP2400ESM12 Summary of contents
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... The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry ...
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... GP2400ESM12 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. ...
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... I = 2400A 15V 2400A 125˚ case DC 50˚ 125˚C case 1ms 125˚ 2400A 2400A 125˚C F case V = 25V 0V 1MHz GP2400ESM12 Min. Typ. Max. Units - - 100 7 2.7 V 3.5 - 3.2 4 2400 ...
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... GP2400ESM12 ELECTRICAL CHARACTERISTICS For definition of switching waveforms, refer to figure 3 and 25˚C unless stated otherwise. case Symbol Parameter t Turn-off delay time d(off) Fall time Turn-off energy loss OFF t Turn-on delay time d(on) t Rise time r E Turn-on energy loss ON Q Diode reverse recovery charge ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures Fig.3 Definition of turn-on switching times Fig.4 Definition of turn-off switching times GP2400ESM12 5/12 ...
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... GP2400ESM12 TYPICAL CHARACTERISTICS 4800 Common emitter T = 25˚C case 4200 3600 3000 2400 1800 1200 600 0 0 1.0 2.0 Collector-emitter voltage, V Fig.5 Typical output characteristics 1000 Conditions 25˚C case 900 V = 600V 15V ge 800 700 600 500 400 300 200 100 0 0 400 ...
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... C Fig.10 Typical turn-off energy vs collector current 3000 2500 = 125˚C 2000 1500 T = 25˚C case 1000 500 0 0 1600 2000 2400 - (A) C GP2400ESM12 Conditions 125'C case V = 600V 15V ge 400 800 1200 1600 Collector current (A) C Conditions 125˚C case ...
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... GP2400ESM12 2400 T 2000 1600 1200 800 400 0 0 0.5 1 1.5 Forward voltage, V Fig.13 Diode typical forward characteristics 10000 1000 I (DC) C max 100 100 Collector emitter voltage, V Fig.15 Forward bias safe operating area Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4000 PWM Sine Wave. 3500 Power Factor = 0.9, Modulation Index = 1 3000 2500 2000 1500 1000 500 Fig.19 DC current rating vs case temperature GP2400ESM12 100 120 Case temperature (˚C) case 140 160 9/12 ...
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... GP2400ESM12 PACKAGE DETAILS For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/12 Nominal weight: 1650g Module outline type code: E ...
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... Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. GP2400ESM12 Application Note Number AN4502 AN4503 ...
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... GP2400ESM12 HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 DYNEX POWER INC. Unit Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status ...