FKPF3N80 Fairchild Semiconductor, FKPF3N80 Datasheet

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FKPF3N80

Manufacturer Part Number
FKPF3N80
Description
Bi-Directional Triode Thyristor Planar Silicon
Manufacturer
Fairchild Semiconductor
Datasheet
www.DataSheet4U.com
©2004 Fairchild Semiconductor Corporation
Application Explanation
• Switching mode power supply, light dimmer, electric flasher unit
• TV sets, stereo, refrigerator, washing machine, bread maker
• Electric blanket, solenoid driver, small motor control
• Photo copier, electric tool
Bi-Directional Triode Thyristor Planar Silicon
Absolute Maximum Ratings
Thermal Characteristic
V
Symbol
I
I
I
di/dt
P
P
V
I
T
T
V
R
Symbol
T (RMS)
TSM
2
GM
Symbol
J
STG
DRM
GM
G (AV)
GM
iso
th(J-C)
t
Critical Rate of Rise of On-State Current
RMS On-State Current
Surge On-State Current
I
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Voltage
Peak Gate Current
Junction Temperature
Storage Temperature
Isolation Voltage
Thermal Resistance
2
t for Fusing
Repetitive Peak Off-State Voltage
1 2 3
Parameter
Parameter
Parameter
TO-220F
T
C
=25 C unless otherwise noted
(Note1 )
FKPF3N80
Junction to case
Commercial frequency, sine full wave 360
conduction, T
Sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of halfwave,
surge on-state current, tp=10ms
I
Ta=25 C, AC 1 minute, T
case
G
= 2x I
Test Condition
GT
, tr
(Note 4)
C
=110 C
100ns
Conditions
Rating
800
1
T
2
1
2
G terminal to
Min.
3
-
50Hz
60Hz
1: T
2: T
3: Gate
Typ.
1
2
-
- 40 ~ 125
- 40 ~ 125
Rating
1500
4.5
0.5
Units
30
33
50
10
3
5
2
Max.
V
4.3
Rev. A, April 2004
Units
Units
A/ s
A
C/W
W
W
A
A
A
V
A
V
2
C
C
s

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FKPF3N80 Summary of contents

Page 1

... J T Storage Temperature STG V Isolation Voltage iso Thermal Characteristic Symbol Parameter R Thermal Resistance th(J-C) ©2004 Fairchild Semiconductor Corporation FKPF3N80 TO-220F T =25 C unless otherwise noted C Parameter (Note1 ) Conditions Commercial frequency, sine full wave 360 conduction, T =110 C C Sinewave 1 full cycle, peak value, non-repetitive ...

Page 2

... Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance R in case of greasing is 0.5 C/W TH(c-f) V DRM (V) FKPF3N80 1. Junction Temperature T =125 Rate of decay of on-state commutating current (di/dt) 3. Peak off-state voltage ...

Page 3

... FGT Ⅰ RGT Ⅲ 0.1 10 100 GATE CURRENT [mA] Figure 3. Gate Characteristics 1000 100 10 -60 -40 - JUNCTION TEMPERATURE [ Figure 5. Gate Trigger Voltage vs Tj ©2004 Fairchild Semiconductor Corporation 125 1.5 2.0 2.5 1 NUMBER OF CYCLES AT 50Hz AND 60Hz Figure 2. Rated Surge On-state Current ...

Page 4

... LOADS RMS ON-STATE CURRNT [A] Figure 9. Maximum On-state Power Dissipation 1000 100 10 -60 -40 - JUNCTION TEMPERATURE [ Figure 11. Holding Current vs Junction Temperature ©2004 Fairchild Semiconductor Corporation 160 140 120 100 ⑤ 80 ④ 360 ③ CONDUCTION 40 RESISTIVE, INDUCTIVE ② 20 LOADS ...

Page 5

... QUADRANT 40 Ⅲ RATE OF RISE OF-STATE VOLTAGE [V/us] Figure 15. Breakover Voltage vs. Rate of Rise of Off-State Voltage ©2004 Fairchild Semiconductor Corporation 1000 TYPICAL EXAMPLE 100 I Ⅰ 100 120 140 Figure 14. Gate Trigger Current vs. TYPICAL EXAMPLE Tj=125 ℃ ...

Page 6

... Package Dimension www.DataSheet4U.com MAX1.47 0.80 0.35 2.54TYP [2.54 ©2003 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) 0.10 #1 0.10 0.50 2.54TYP ] [2.54 ] 0.20 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, April 2004 ...

Page 7

... TRADEMARKS www.DataSheet4U.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ ...

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