IRF520A Fairchild Semiconductor, IRF520A Datasheet
IRF520A
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IRF520A Summary of contents
Page 1
... Junction-to-Case Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 100V DS = =100 ) = Characteristic Case-to-Sink IRF520A BV = 100 V DSS R = 0.2 DS(on 9 TO-220 1.Gate 2. Drain 3. Source Value Units V 100 9 113 mJ A 9.2 4.5 mJ 6.5 ...
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... IRF520A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 6. Gate Charge vs. Gate-Source Voltage = IRF520A @ Notes : 250 s Pulse Test Gate-Source Voltage [ ...
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... IRF520A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area Limited by R DS(on Notes : 175 Single Pulse - Drain-Source Voltage [V] DS D=0 ...
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... DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRF520A Charge d(off off BV 1 DSS ---- 2 -------------------- = DSS Time ...
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... IRF520A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...