SGH15N120RUFD Fairchild Semiconductor, SGH15N120RUFD Datasheet
SGH15N120RUFD
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SGH15N120RUFD Summary of contents
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... 100 C C Parameter IGBT = 100 15V 2 15A CE(sat 70ns (typ SGH15N120RUFD Units 1200 180 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.69 C/W -- 1.0 C C/W SGH15N120RUFD Rev. B2 ...
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... V -- 2 1400 -- pF -- 135 -- 110 ns -- 150 300 1.98 2 150 ns -- 200 400 2.63 3. 108 Typ. Max. Units -- 2 100 7 245 450 nC -- 360 -- SGH15N120RUFD Rev. B2 ...
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... Collector - Emitter Voltage 600V CC Load Current : peak of square wave Duty cycle : 50% = 100 ℃ Power Dissipation = 35W 1 10 100 Frequency [KHz] = 125℃ C 30A 15A Gate - Emitter Voltage SGH15N120RUFD Rev 1000 20 ...
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... 25℃ 125℃ 100 Gate Resistance ± 15V = 600V 25℃ = 125℃ Eoff Eon Eoff 10 100 Gate Resistance ± 15V 20Ω 25℃ = 125℃ Collector Current, I [A] C SGH15N120RUFD Rev ...
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... T C 600V 400V V = 200V Gate charge, Q [nC] g Safe Operating Area V = 20V 100℃ 100 1000 Collector - Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGH15N120RUFD Rev ...
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... 25℃ 100℃ 100 [V] FM Fig 19. Reverse Recovery Current 140 15A 25℃ 120 100℃ C 100 500 100 Fig 21. Reverse Recovery Time 500 di/dt [ 200V 500 di/dt [A/ s] SGH15N120RUFD Rev. B2 ...
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... Package Dimension TO-3P (FS PKG CODE AF) 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters SGH15N120RUFD Rev. B2 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...