SGH15N120RUFD Fairchild Semiconductor, SGH15N120RUFD Datasheet

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SGH15N120RUFD

Manufacturer Part Number
SGH15N120RUFD
Description
Discrete, Short Circuit Rated Igbt With Diode
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number:
SGH15N120RUFD
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2002 Fairchild Semiconductor Corporation
SGH15N120RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGBTs) provides low conduction and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short circuit ruggedness is a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
V
V
I
I
I
I
T
P
T
T
T
R
R
R
C
CM (1)
F
FM
stg
SC
J
L
CES
GES
D
Symbol
JC
JC
JA
Symbol
(IGBT)
(DIODE)
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G C E
Description
TO-3P
Parameter
T
C
= 25 C unless otherwise noted
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
Features
• Short circuit rated 10 s @ T
• High speed switching
• Low saturation voltage : V
• High input impedance
• CO-PAK, IGBT with FRD : t
= 25 C
= 100 C
= 100 C
= 100 C
= 25 C
= 100 C
G
G
SGH15N120RUFD
Typ.
--
--
--
-55 to +150
-55 to +150
1200
180
300
24
15
45
15
90
10
72
25
CE(sat)
C
C
E
E
rr
C
= 70ns (typ.)
= 100 C, V
Max.
0.69
1.0
= 2.3 V @ I
40
IGBT
GE
SGH15N120RUFD Rev. B2
= 15V
C
Units
Units
= 15A
C/W
C/W
C/W
W
W
V
V
A
A
A
A
A
C
C
C
s

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SGH15N120RUFD Summary of contents

Page 1

... 100 C C Parameter IGBT = 100 15V 2 15A CE(sat 70ns (typ SGH15N120RUFD Units 1200 180 -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.69 C/W -- 1.0 C C/W SGH15N120RUFD Rev. B2 ...

Page 2

... V -- 2 1400 -- pF -- 135 -- 110 ns -- 150 300 1.98 2 150 ns -- 200 400 2.63 3. 108 Typ. Max. Units -- 2 100 7 245 450 nC -- 360 -- SGH15N120RUFD Rev. B2 ...

Page 3

... Collector - Emitter Voltage 600V CC Load Current : peak of square wave Duty cycle : 50% = 100 ℃ Power Dissipation = 35W 1 10 100 Frequency [KHz] = 125℃ C 30A 15A Gate - Emitter Voltage SGH15N120RUFD Rev 1000 20 ...

Page 4

... 25℃ 125℃ 100 Gate Resistance ± 15V = 600V 25℃ = 125℃ Eoff Eon Eoff 10 100 Gate Resistance ± 15V 20Ω 25℃ = 125℃ Collector Current, I [A] C SGH15N120RUFD Rev ...

Page 5

... T C 600V 400V V = 200V Gate charge, Q [nC] g Safe Operating Area V = 20V 100℃ 100 1000 Collector - Emitter Voltage, V [V] CE Pdm t1 t2 Duty factor Peak Tj = Pdm Zthjc + SGH15N120RUFD Rev ...

Page 6

... 25℃ 100℃ 100 [V] FM Fig 19. Reverse Recovery Current 140 15A 25℃ 120 100℃ C 100 500 100 Fig 21. Reverse Recovery Time 500 di/dt [ 200V 500 di/dt [A/ s] SGH15N120RUFD Rev. B2 ...

Page 7

... Package Dimension TO-3P (FS PKG CODE AF) 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters SGH15N120RUFD Rev. B2 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ ...

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