2N5772-D75Z Fairchild Semiconductor, 2N5772-D75Z Datasheet
2N5772-D75Z
Manufacturer Part Number
2N5772-D75Z
Description
2n5772 Npn Switching Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.2N5772-D75Z.pdf
(4 pages)
©2004 Fairchild Semiconductor Corporation
NPN Switching Transistor
• Sourced from process 22.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
* Pulse Test: Pulse Width
V
V
V
I
T
Off Characteristics
BV
BV
BV
BV
I
I
I
On Characteristics *
h
V
V
Small Signal Characteristics
C
C
h
C
CBO
CES
EBO
FE
fe
STG
CEO
CBO
EBO
CE
BE
cb
eb
Symbol
(BR)CEO
(BR)CES
(BR)EBO
(BR)CBO
Symbol
(sat)
(sat)
Collector-Emitter Breakdown Voltage *
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Capacitance
Emitter-Base Capacitance
Small-Signal Current Gain
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
300 s, Duty Cycle
Parameter
2.0%
T
a
=25 C unless otherwise noted
Parameter
- Continued
T
a
=25 C unless otherwise noted
2N5772
I
I
I
I
V
V
V
V
V
V
V
I
I
I
I
I
I
V
V
I
C
C
C
E
C
C
C
C
C
C
C
CB
CE
CE
EB
CE
CE
CE
CB
CB
= 10mA, I
= 100 A, V
= 100 A, I
= 100 A, I
= 30mA, I
= 100mA, I
= 300mA, I
= 30mA, I
= 100mA, I
= 300mA, I
= 300mA, V
= 5.0V, I
= 20V, I
= 20V, V
= 20V, V
= 0.4V, I
= 0.5V, I
= 1.0V, I
= 5.0V, I
= 5.0V, I
Test Condition
B
E
B
B
C
C
E
C
C
C
E
C
BE
BE
B
B
B
B
BE
= 0
= 0
= 3.0mA
= 3.0mA
CE
= 0
= 0
= 0
= 30mA
= 100mA
= 300mA
= 0, f = 1MHz
= 0, f = 1MHz
= 10mA
= 3.0mA
= 10mA
= 3.0mA
= 0
= 0, T
= 0
= 10V, f = 100MHz
a
= 65 C
1. Emitter 2. Base 3. Collector
1
- 55 ~ 150
Value
300
5.0
15
40
0.73
Min.
5.0
3.5
15
40
40
30
25
15
TO-92
Max.
0.28
0.95
120
0.5
0.5
3.0
100
0.2
0.5
1.2
1.7
5.0
8.0
Rev. B, October 2004
Units
mA
V
V
V
C
Units
pF
pF
V
V
V
V
V
V
V
V
V
V
A
A
A
A
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2N5772-D75Z Summary of contents
Page 1
... Base-Emitter Saturation Voltage BE Small Signal Characteristics C Collector-Base Capacitance cb C Emitter-Base Capacitance eb h Small-Signal Current Gain fe * Pulse Test: Pulse Width 300 s, Duty Cycle ©2004 Fairchild Semiconductor Corporation 2N5772 T =25 C unless otherwise noted a Parameter - Continued T =25 C unless otherwise noted a Test Condition I = 10mA ...
Page 2
... Turn-Off Time off Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation Ta=25 C unless otherwise noted (Continued) Test Condition I = 300mA 10V 30mA =25 C unless otherwise noted ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B, October 2004 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ ...