MPSA27-D75Z Fairchild Semiconductor, MPSA27-D75Z Datasheet
MPSA27-D75Z
Manufacturer Part Number
MPSA27-D75Z
Description
Npn Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSA27-D75Z.pdf
(4 pages)
©2002 Fairchild Semiconductor Corporation
NPN General Purpose Amplifier
• This device is designed for applications requiring
• Sourced from process 03.
• See MPSA28 for characteristics.
Absolute Maximum Ratings*
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
* Device mounted on FR-4 PCB 36mm
V
V
V
I
T
Off Characteristics
V
V
V
I
I
I
On Characteristics
h
V
V
Small Signal Characteristics
f
P
R
R
C
CBO
CES
EBO
T
extremely high current gain at collector currents to
500mA.
FE
J
CES
CBO
EBO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
BE(on)
D
Symbol
Symbol
, T
JC
JA
Symbol
stg
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Operating and Storage Junction Temperature
Parameter
18mm
1.5mm mounting pad for the collector lead min. 6cm.
Parameter
T
A
T
=25 C unless otherwise noted
A
MPSA27/PZTA27
=25 C unless otherwise noted
Parameter
T
A
=25 C unless otherwise noted
- Continuous
I
I
I
V
V
V
I
I
I
I
I
f = 100MHz
C
C
C
C
C
C
C
C
1. Emitter 2. Base 3. Collector
CB
CE
EB
= 100 A, V
= 10 A, I
= 100 A, I
= 10mA, V
= 100mA, V
= 100mA, I
= 100mA, V
= 10mA, V
= 10V, I
= 50V, I
= 50V, V
1
Test Condition
C
C
E
C
BE
CE
CE
B
= 0
BE
= 0
= 0
CE
CE
= 0
= 0.1mA
= 0
= 5.0V
= 5.0V,
= 0
= 5.0V
= 5.0V
MPSA27
TO-92
83.3
625
200
5.0
Max.
10000
10000
Min.
125
-55 ~ +150
1. Base 2. Collector 3. Emitter
60
60
10
Value
*PZTA27
800
60
60
10
4
1000
125
8.0
Typ.
1
Max.
100
500
100
1.5
2.0
SOT-223
2
mW/ C
Rev. A1, June 2002
Units
mW
Units
C/W
C/W
3
mA
V
V
V
C
Units
MHz
nA
nA
nA
V
V
V
V
V
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MPSA27-D75Z Summary of contents
Page 1
... SOT-223 TO-92 1. Base 2. Collector 3. Emitter Value Units 800 -55 ~ +150 Min. Typ. Max 100 500 100 10000 = 5.0V 10000 1.5 = 5.0V 2.0 125 Max. Units MPSA27 *PZTA27 625 1000 mW 5.0 8.0 mW/ C 83.3 C/W 200 125 C/W Rev. A1, June 2002 Units MHz ...
Page 2
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A1, June 2002 ...
Page 3
... Package Demensions (0.95) ©2002 Fairchild Semiconductor Corporation (Continued) SOT-223 3.00 0.10 MAX1.80 2.30 TYP 0.70 0.10 (0.95) 4.60 0.25 0.25 6.50 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Dimensions in Millimeters Rev. A1, June 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...