FDS6676 Fairchild Semiconductor, FDS6676 Datasheet

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FDS6676

Manufacturer Part Number
FDS6676
Description
30V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDS6676
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JA
JC
DC/DC converter
Device Marking
STG
N-Channel
FDS6676
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
MOSFET
SO-8
DS(ON)
D
D
and fast switching speed.
– Conti nuous
– Pulsed
has
S
FDS6676
Device
Parameter
S
been
S
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1c)
(Note 1)
Features
14.5 A, 30 V. R
High performance trench technology for extremely
low R
Low gate charge (45 nC typ)
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
R
DS(ON)
DS(ON)
12mm
–55 to +175
Ratings
14.5
125
2.5
1.2
1.0
30
50
50
25
16
= 7 m @ V
= 8 m @ V
4
3
2
1
GS
GS
= 10 V
= 4.5 V
May 2003
2500 units
FDS6676 Rev D (W)
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C

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FDS6676 Summary of contents

Page 1

... Reel Size 13’’ May 2003 = DS(ON 4.5 V DS(ON Ratings Units 14 2.5 W 1.2 1.0 C –55 to +175 C/W 50 C/W 125 C/W 25 Tape width Quantity 12mm 2500 units FDS6676 Rev D (W) ...

Page 2

... 2.1 A (Note Min Typ Max Units mJ 370 mV 100 nA –100 mV/ C –5 4 5.4 8 7.3 11 5103 pF 836 pF 361 139 2.1 A 0.7 1.2 V FDS6676 Rev D (W) ...

Page 3

... Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% is determined by the user's board design 105°C/W when 2 2 mounted on a .04 in pad copper c) 125°C/W when mounted on a minimum pad. FDS6676 Rev D (W) ...

Page 4

... Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 7. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6676 Rev D ( 1.2 ...

Page 5

... RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS6676 Rev D (W) 30 100 ...

Page 6

CROSSVOLT â â â â â Rev. I2 ...

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